High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme.Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions.The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod dosatron d40mz2 arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents.
In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily animed aniflex complete applied on other kinds of nanoscale optoelectronic devices.